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HUFA76609D3ST_F085

HUFA76609D3ST_F085

For Reference Only

Part Number HUFA76609D3ST_F085
PNEDA Part # HUFA76609D3ST_F085
Description MOSFET N-CH 100V 10A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,030
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HUFA76609D3ST_F085 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHUFA76609D3ST_F085
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
HUFA76609D3ST_F085, HUFA76609D3ST_F085 Datasheet (Total Pages: 10, Size: 427.65 KB)
PDFHUFA76609D3ST_F085 Datasheet Cover
HUFA76609D3ST_F085 Datasheet Page 2 HUFA76609D3ST_F085 Datasheet Page 3 HUFA76609D3ST_F085 Datasheet Page 4 HUFA76609D3ST_F085 Datasheet Page 5 HUFA76609D3ST_F085 Datasheet Page 6 HUFA76609D3ST_F085 Datasheet Page 7 HUFA76609D3ST_F085 Datasheet Page 8 HUFA76609D3ST_F085 Datasheet Page 9 HUFA76609D3ST_F085 Datasheet Page 10

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HUFA76609D3ST_F085 Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101, UltraFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs160mOhm @ 10A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds425pF @ 25V
FET Feature-
Power Dissipation (Max)49W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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