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IAUC120N04S6N009ATMA1

IAUC120N04S6N009ATMA1

For Reference Only

Part Number IAUC120N04S6N009ATMA1
PNEDA Part # IAUC120N04S6N009ATMA1
Description MOSFET N-CH 40V 120A PG-HSOG-8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,960
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IAUC120N04S6N009ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIAUC120N04S6N009ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IAUC120N04S6N009ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesAutomotive, AEC-Q101, OptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Rds On (Max) @ Id, Vgs0.9mOhm @ 60A, 10V
Vgs(th) (Max) @ Id3.4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs115nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7360pF @ 25V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-33
Package / Case8-PowerTDFN

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