IDV30E60C
For Reference Only
| Part Number | IDV30E60C |
| PNEDA Part # | IDV30E60C |
| Description | DIODE GEN PURP 600V 21A TO22FP |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 5,868 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 14 - Jun 19 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IDV30E60C Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IDV30E60C |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
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- Orders cannot be canceled after shipping the packages.
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IDV30E60C Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 21A |
| Voltage - Forward (Vf) (Max) @ If | 2.05V @ 30A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 130ns |
| Current - Reverse Leakage @ Vr | 40µA @ 600V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 Full Pack |
| Supplier Device Package | PG-TO220-2 Full Pack |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Manufacturer STMicroelectronics Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 3A Voltage - Forward (Vf) (Max) @ If 950mV @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 35ns Current - Reverse Leakage @ Vr 3µA @ 200V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case DO-201AD, Axial Supplier Device Package DO-201AD Operating Temperature - Junction 175°C (Max) |
Manufacturer Central Semiconductor Corp Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 700mV @ 2A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 500µA @ 60V Capacitance @ Vr, F 170pF @ 4V, 1MHz Mounting Type Through Hole Package / Case DO-204AC, DO-15, Axial Supplier Device Package DO-15 Operating Temperature - Junction -65°C ~ 125°C |
Manufacturer Taiwan Semiconductor Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 16A Voltage - Forward (Vf) (Max) @ If 950mV @ 8A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 35ns Current - Reverse Leakage @ Vr 10µA @ 100V Capacitance @ Vr, F 85pF @ 4V, 1MHz Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247AD (TO-3P) Operating Temperature - Junction -55°C ~ 150°C |
