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IGB15N65S5ATMA1

IGB15N65S5ATMA1

For Reference Only

Part Number IGB15N65S5ATMA1
PNEDA Part # IGB15N65S5ATMA1
Description IGBT PRODUCTS
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,060
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 31 - Jun 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IGB15N65S5ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIGB15N65S5ATMA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IGB15N65S5ATMA1 Specifications

ManufacturerInfineon Technologies
Series*
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)-
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input Type-
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

240A

Current - Collector Pulsed (Icm)

440A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 75A

Power - Max

1150W

Switching Energy

4.5mJ (on), 2.7mJ (off)

Input Type

Standard

Gate Charge

157nC

Td (on/off) @ 25°C

22ns/182ns

Test Condition

600V, 50A, 3Ohm, 15V

Reverse Recovery Time (trr)

66ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

TrenchStop®

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

12A

Current - Collector Pulsed (Icm)

18A

Vce(on) (Max) @ Vge, Ic

2.05V @ 15V, 6A

Power - Max

88W

Switching Energy

200µJ

Input Type

Standard

Gate Charge

42nC

Td (on/off) @ 25°C

9ns/130ns

Test Condition

400V, 6A, 23Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

PG-TO220-3

IRGI4059DPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

-

Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

Standard

Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

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FGD3245G2-F085V

ON Semiconductor

Manufacturer

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Series

*

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

-

Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

-

Power - Max

-

Switching Energy

-

Input Type

-

Gate Charge

-

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

-

Operating Temperature

-

Mounting Type

-

Package / Case

-

Supplier Device Package

-

Manufacturer

IXYS

Series

BIMOSFET™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

3000V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

280A

Vce(on) (Max) @ Vge, Ic

3.2V @ 15V, 32A

Power - Max

400W

Switching Energy

-

Input Type

Standard

Gate Charge

142nC

Td (on/off) @ 25°C

50ns/160ns

Test Condition

1250V, 32A, 2Ohm, 15V

Reverse Recovery Time (trr)

1500ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Supplier Device Package

TO-268HV

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