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IGB30N60H3ATMA1

IGB30N60H3ATMA1

For Reference Only

Part Number IGB30N60H3ATMA1
PNEDA Part # IGB30N60H3ATMA1
Description IGBT 600V 60A 187W TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 12,756
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IGB30N60H3ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIGB30N60H3ATMA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IGB30N60H3ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesTrenchStop®
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)60A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 30A
Power - Max187W
Switching Energy1.17mJ
Input TypeStandard
Gate Charge165nC
Td (on/off) @ 25°C18ns/207ns
Test Condition400V, 30A, 10.5Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackagePG-TO263-3

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

460V

Current - Collector (Ic) (Max)

20A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

500ns/4µs

Test Condition

300V, 8A, 100Ohm, 5V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Alpha & Omega Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

760µJ (on), 180µJ (off)

Input Type

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Gate Charge

24.6nC

Td (on/off) @ 25°C

20ns/66ns

Test Condition

400V, 20A, 15Ohm, 15V

Reverse Recovery Time (trr)

107ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

150µJ (on), 300µJ (off)

Input Type

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Gate Charge

101nC

Td (on/off) @ 25°C

23ns/108ns

Test Condition

200V, 30A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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RGCL80TS60DGC11

Rohm Semiconductor

Manufacturer

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Series

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IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

1.11mJ (on), 1.68mJ (off)

Input Type

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Gate Charge

98nC

Td (on/off) @ 25°C

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Test Condition

400V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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