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IGB30N60H3ATMA1

IGB30N60H3ATMA1

For Reference Only

Part Number IGB30N60H3ATMA1
PNEDA Part # IGB30N60H3ATMA1
Description IGBT 600V 60A 187W TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 12,756
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IGB30N60H3ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIGB30N60H3ATMA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IGB30N60H3ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesTrenchStop®
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)60A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 30A
Power - Max187W
Switching Energy1.17mJ
Input TypeStandard
Gate Charge165nC
Td (on/off) @ 25°C18ns/207ns
Test Condition400V, 30A, 10.5Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackagePG-TO263-3

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

140A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

170nC

Td (on/off) @ 25°C

50ns/150ns

Test Condition

960V, 35A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

170A

Current - Collector Pulsed (Icm)

340A

Vce(on) (Max) @ Vge, Ic

3.2V @ 15V, 85A

Power - Max

962W

Switching Energy

6mJ (on), 3.8mJ (off)

Input Type

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Gate Charge

660nC

Td (on/off) @ 25°C

43ns/300ns

Test Condition

600V, 85A, 4.3Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-264-3, TO-264AA

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

30A

Current - Collector Pulsed (Icm)

52A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

130nC

Td (on/off) @ 25°C

18ns/580ns

Test Condition

800V, 15A, 33Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

PG-TO263-3

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Sanken

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

30A

Current - Collector Pulsed (Icm)

90A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 30A

Power - Max

60W

Switching Energy

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Input Type

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Gate Charge

120nC

Td (on/off) @ 25°C

130ns/340ns

Test Condition

300V, 30A

Reverse Recovery Time (trr)

-

Operating Temperature

-

Mounting Type

Through Hole

Package / Case

TO-3P-3 Full Pack

Supplier Device Package

TO-3PF

Manufacturer

IXYS

Series

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IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

145A

Current - Collector Pulsed (Icm)

440A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 70A

Power - Max

400W

Switching Energy

1.9mJ (on), 2mJ (off)

Input Type

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Gate Charge

143nC

Td (on/off) @ 25°C

30ns/120ns

Test Condition

360V, 70A, 2Ohm, 15V

Reverse Recovery Time (trr)

140ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

24-PowerSMD, 21 Leads

Supplier Device Package

24-SMPD

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