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IGP40N65H5XKSA1

IGP40N65H5XKSA1

For Reference Only

Part Number IGP40N65H5XKSA1
PNEDA Part # IGP40N65H5XKSA1
Description IGBT 650V 74A 255W PG-TO247-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,452
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 19 - Jun 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IGP40N65H5XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIGP40N65H5XKSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IGP40N65H5XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesTrenchStop®
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)74A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 40A
Power - Max255W
Switching Energy390µJ (on), 120µJ (off)
Input TypeStandard
Gate Charge95nC
Td (on/off) @ 25°C22ns/165ns
Test Condition400V, 20A, 15Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220-3

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Input Type

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Operating Temperature

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Infineon Technologies

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

3.26mJ (on), 2.27mJ (off)

Input Type

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Gate Charge

340nC

Td (on/off) @ 25°C

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Test Condition

480V, 60A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Global Power Technologies Group

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Series

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

35ns/85ns

Test Condition

400V, 40A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

60µJ (on), 80µJ (off)

Input Type

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Gate Charge

26nC

Td (on/off) @ 25°C

22ns/110ns

Test Condition

480V, 6.5A, 50Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

FGY60T120SQDN

ON Semiconductor

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

600V, 60A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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