IGW40N120H3FKSA1
For Reference Only
| Part Number | IGW40N120H3FKSA1 |
| PNEDA Part # | IGW40N120H3FKSA1 |
| Description | IGBT 1200V 80A 483W TO247-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 21,228 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 16 - Jun 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IGW40N120H3FKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IGW40N120H3FKSA1 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IGW40N120H3FKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | TrenchStop® |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 80A |
| Current - Collector Pulsed (Icm) | 160A |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 40A |
| Power - Max | 483W |
| Switching Energy | 3.16mJ |
| Input Type | Standard |
| Gate Charge | 185nC |
| Td (on/off) @ 25°C | 30ns/290ns |
| Test Condition | 600V, 40A, 12Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | PG-TO247-3 |
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Manufacturer IXYS Series - IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 20A Current - Collector Pulsed (Icm) - Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 10A Power - Max 85W Switching Energy 1.1mJ (on), 1.1mJ (off) Input Type Standard Gate Charge 27nC Td (on/off) @ 25°C - Test Condition 600V, 10A, 100Ohm, 15V Reverse Recovery Time (trr) 350ns Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
Manufacturer Sanken Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 30A Current - Collector Pulsed (Icm) 100A Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 30A Power - Max 60W Switching Energy - Input Type Standard Gate Charge 65nC Td (on/off) @ 25°C 100ns/300ns Test Condition 300V, 30A, 39Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-3P-3 Full Pack Supplier Device Package TO-3PF |
Manufacturer ON Semiconductor Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 54A Current - Collector Pulsed (Icm) 160A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 18A Power - Max 390W Switching Energy 1.9mJ (on), 1.8mJ (off) Input Type Standard Gate Charge 165nC Td (on/off) @ 25°C 23ns/170ns Test Condition 960V, 18A, 3Ohm, 15V Reverse Recovery Time (trr) 75ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247-3 |
