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IGW50N60TPXKSA1

IGW50N60TPXKSA1

For Reference Only

Part Number IGW50N60TPXKSA1
PNEDA Part # IGW50N60TPXKSA1
Description IGBT 600V 80A TO247-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,056
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IGW50N60TPXKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIGW50N60TPXKSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IGW50N60TPXKSA1 Specifications

ManufacturerInfineon Technologies
SeriesTrenchStop™
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)80A
Current - Collector Pulsed (Icm)150A
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 50A
Power - Max319.2W
Switching Energy1.53mJ (on), 850µJ (off)
Input TypeStandard
Gate Charge249nC
Td (on/off) @ 25°C20ns/215ns
Test Condition400V, 50A, 7Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Td (on/off) @ 25°C

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Test Condition

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

TrenchStop®

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

8A

Current - Collector Pulsed (Icm)

12A

Vce(on) (Max) @ Vge, Ic

2.05V @ 15V, 4A

Power - Max

42W

Switching Energy

143µJ

Input Type

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Gate Charge

27nC

Td (on/off) @ 25°C

14ns/164ns

Test Condition

400V, 4A, 47Ohm, 15V

Reverse Recovery Time (trr)

28ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Supplier Device Package

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Manufacturer

IXYS

Series

HiPerFAST™, Lightspeed™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

24A

Current - Collector Pulsed (Icm)

48A

Vce(on) (Max) @ Vge, Ic

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Power - Max

100W

Switching Energy

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Gate Charge

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Td (on/off) @ 25°C

20ns/60ns

Test Condition

480V, 12A, 18Ohm, 15V

Reverse Recovery Time (trr)

35ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

Alpha IGBT™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

128A

Vce(on) (Max) @ Vge, Ic

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Power - Max

278W

Switching Energy

1.18mJ (on), 200µJ (off)

Input Type

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Gate Charge

47nC

Td (on/off) @ 25°C

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Test Condition

400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

137ns

Operating Temperature

-55°C ~ 150°C (TJ)

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Package / Case

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Supplier Device Package

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Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 7®

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

41A

Current - Collector Pulsed (Icm)

45A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Reverse Recovery Time (trr)

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Operating Temperature

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Supplier Device Package

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