IGW50N60TPXKSA1
For Reference Only
| Part Number | IGW50N60TPXKSA1 |
| PNEDA Part # | IGW50N60TPXKSA1 |
| Description | IGBT 600V 80A TO247-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 7,056 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 13 - Jun 18 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IGW50N60TPXKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IGW50N60TPXKSA1 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IGW50N60TPXKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | TrenchStop™ |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 80A |
| Current - Collector Pulsed (Icm) | 150A |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 50A |
| Power - Max | 319.2W |
| Switching Energy | 1.53mJ (on), 850µJ (off) |
| Input Type | Standard |
| Gate Charge | 249nC |
| Td (on/off) @ 25°C | 20ns/215ns |
| Test Condition | 400V, 50A, 7Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | PG-TO247-3 |
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Manufacturer Alpha & Omega Semiconductor Inc. Series Alpha IGBT™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 60A Current - Collector Pulsed (Icm) 128A Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 30A Power - Max 278W Switching Energy 1.18mJ (on), 200µJ (off) Input Type Standard Gate Charge 47nC Td (on/off) @ 25°C 26ns/71ns Test Condition 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr) 137ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 |
Manufacturer Microsemi Corporation Series POWER MOS 7® IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 41A Current - Collector Pulsed (Icm) 45A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 11A Power - Max 187W Switching Energy 46µJ (on), 90µJ (off) Input Type Standard Gate Charge 40nC Td (on/off) @ 25°C 7ns/29ns Test Condition 400V, 11A, 5Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247-3 |
