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IGW50N65F5AXKSA1

IGW50N65F5AXKSA1

For Reference Only

Part Number IGW50N65F5AXKSA1
PNEDA Part # IGW50N65F5AXKSA1
Description IGBT 650V TO247-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,092
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IGW50N65F5AXKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIGW50N65F5AXKSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IGW50N65F5AXKSA1, IGW50N65F5AXKSA1 Datasheet (Total Pages: 14, Size: 1,847.71 KB)
PDFIGW50N65F5AXKSA1 Datasheet Cover
IGW50N65F5AXKSA1 Datasheet Page 2 IGW50N65F5AXKSA1 Datasheet Page 3 IGW50N65F5AXKSA1 Datasheet Page 4 IGW50N65F5AXKSA1 Datasheet Page 5 IGW50N65F5AXKSA1 Datasheet Page 6 IGW50N65F5AXKSA1 Datasheet Page 7 IGW50N65F5AXKSA1 Datasheet Page 8 IGW50N65F5AXKSA1 Datasheet Page 9 IGW50N65F5AXKSA1 Datasheet Page 10 IGW50N65F5AXKSA1 Datasheet Page 11

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IGW50N65F5AXKSA1 Specifications

ManufacturerInfineon Technologies
SeriesAutomotive, AEC-Q101, TrenchStop™
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)80A
Current - Collector Pulsed (Icm)150A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 50A
Power - Max270W
Switching Energy490µJ (on), 140µJ (off)
Input TypeStandard
Gate Charge108nC
Td (on/off) @ 25°C21ns/156ns
Test Condition400V, 25A, 12Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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STMicroelectronics

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

26ns/108ns

Test Condition

400V, 20A, 12Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

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Microsemi

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Series

Thunderbolt IGBT®

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1200V

Current - Collector (Ic) (Max)

106A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

3585µJ (on), 1910µJ (off)

Input Type

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Gate Charge

240nC

Td (on/off) @ 25°C

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Test Condition

800V, 50A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Package / Case

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Supplier Device Package

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