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IGZ75N65H5XKSA1

IGZ75N65H5XKSA1

For Reference Only

Part Number IGZ75N65H5XKSA1
PNEDA Part # IGZ75N65H5XKSA1
Description IGBT 650V 75A SGL TO-247-4
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,960
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IGZ75N65H5XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIGZ75N65H5XKSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IGZ75N65H5XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesTrenchStop™ 5
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)119A
Current - Collector Pulsed (Icm)300A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 75A
Power - Max395W
Switching Energy680µJ (on), 430µJ (off)
Input TypeStandard
Gate Charge166nC
Td (on/off) @ 25°C26ns/347ns
Test Condition400V, 37.5A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-4
Supplier Device PackagePG-TO247-4

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Operating Temperature

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

850V, 32A, 2.7Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

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Supplier Device Package

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

930µJ (on), 1mJ (off)

Input Type

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Gate Charge

110nC

Td (on/off) @ 25°C

37ns/330ns

Test Condition

400V, 36A, 10Ohm, 15V

Reverse Recovery Time (trr)

25ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

TO-3P

IKA03N120H2XKSA1

Infineon Technologies

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Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

8.2A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2.8V @ 15V, 3A

Power - Max

29W

Switching Energy

290µJ

Input Type

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Gate Charge

8.6nC

Td (on/off) @ 25°C

9.2ns/281ns

Test Condition

800V, 3A, 82Ohm, 15V

Reverse Recovery Time (trr)

52ns

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

PG-TO220-3

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