IHW25N120E1XKSA1
For Reference Only
| Part Number | IHW25N120E1XKSA1 |
| PNEDA Part # | IHW25N120E1XKSA1 |
| Description | IGBT NPT/TRENCH 1200V 50A TO247 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 6,468 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 8 - May 13 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IHW25N120E1XKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IHW25N120E1XKSA1 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
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Notes
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- Orders cannot be canceled after shipping the packages.
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IHW25N120E1XKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | TrenchStop™ |
| IGBT Type | NPT and Trench |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 50A |
| Current - Collector Pulsed (Icm) | 75A |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 25A |
| Power - Max | 231W |
| Switching Energy | 800µJ (off) |
| Input Type | Standard |
| Gate Charge | 147nC |
| Td (on/off) @ 25°C | - |
| Test Condition | - |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | PG-TO247-3 |
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Manufacturer STMicroelectronics Series PowerMESH™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 15A Current - Collector Pulsed (Icm) 30A Vce(on) (Max) @ Vge, Ic 2.75V @ 15V, 3A Power - Max 65W Switching Energy 55µJ (on), 85µJ (off) Input Type Standard Gate Charge 19nC Td (on/off) @ 25°C 17ns/72ns Test Condition 390V, 3A, 10Ohm, 15V Reverse Recovery Time (trr) 23.5ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
Manufacturer Microsemi Corporation Series - IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 900V Current - Collector (Ic) (Max) 145A Current - Collector Pulsed (Icm) 239A Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 47A Power - Max 625W Switching Energy 1652µJ (on), 1389µJ (off) Input Type Standard Gate Charge 200nC Td (on/off) @ 25°C 18ns/149ns Test Condition 600V, 47A, 4.7Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 [B] |
