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IHW30N110R3FKSA1

IHW30N110R3FKSA1

For Reference Only

Part Number IHW30N110R3FKSA1
PNEDA Part # IHW30N110R3FKSA1
Description IGBT 1100V 60A 333W TO247-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,824
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IHW30N110R3FKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIHW30N110R3FKSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IHW30N110R3FKSA1 Specifications

ManufacturerInfineon Technologies
Series-
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)1100V
Current - Collector (Ic) (Max)60A
Current - Collector Pulsed (Icm)90A
Vce(on) (Max) @ Vge, Ic1.75V @ 15V, 30A
Power - Max333W
Switching Energy1.15mJ (off)
Input TypeStandard
Gate Charge180nC
Td (on/off) @ 25°C-/350ns
Test Condition600V, 30A, 15Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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IGBT Type

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Td (on/off) @ 25°C

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Supplier Device Package

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

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