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IHW40N120R3FKSA1

IHW40N120R3FKSA1

For Reference Only

Part Number IHW40N120R3FKSA1
PNEDA Part # IHW40N120R3FKSA1
Description IGBT 1200V 80A 429W TO247-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,784
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IHW40N120R3FKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIHW40N120R3FKSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IHW40N120R3FKSA1 Specifications

ManufacturerInfineon Technologies
SeriesTrenchStop®
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)80A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic1.75V @ 15V, 40A
Power - Max429W
Switching Energy2.02mJ (off)
Input TypeStandard
Gate Charge335nC
Td (on/off) @ 25°C-/336ns
Test Condition600V, 40A, 7.5Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Td (on/off) @ 25°C

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Test Condition

400V, 20A, 12Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

3.5V @ 15V, 35A

Power - Max

250W

Switching Energy

900µJ (on), 3.8mJ (off)

Input Type

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Gate Charge

140nC

Td (on/off) @ 25°C

40ns/270ns

Test Condition

960V, 35A, 3Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

600V, 20A, 82Ohm, 15V

Reverse Recovery Time (trr)

40ns

Operating Temperature

-55°C ~ 150°C (TJ)

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

300V, 1kOhm, 5V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

TO-252AA

Manufacturer

IXYS

Series

GenX3™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 40A

Power - Max

380W

Switching Energy

800µJ (on), 450µJ (off)

Input Type

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Gate Charge

115nC

Td (on/off) @ 25°C

21ns/70ns

Test Condition

480V, 40A, 3Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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