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IHW40N65R5XKSA1

IHW40N65R5XKSA1

For Reference Only

Part Number IHW40N65R5XKSA1
PNEDA Part # IHW40N65R5XKSA1
Description IGBT 650V 80A 230W TO247
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,136
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 18 - Jun 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IHW40N65R5XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIHW40N65R5XKSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IHW40N65R5XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesTrenchStop®
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)80A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic1.7V @ 15V, 40A
Power - Max230W
Switching Energy630µJ (on), 140µJ (off)
Input TypeStandard
Gate Charge193nC
Td (on/off) @ 25°C30ns/258ns
Test Condition400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)90ns
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Operating Temperature

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Mounting Type

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

19A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

320µJ (on), 2.58mJ (off)

Input Type

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Gate Charge

27nC

Td (on/off) @ 25°C

62ns/690ns

Test Condition

480V, 10A, 50Ohm, 15V

Reverse Recovery Time (trr)

37ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-220-3

Supplier Device Package

TO-220AB

Manufacturer

IXYS

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

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Power - Max

300W

Switching Energy

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Input Type

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Gate Charge

167nC

Td (on/off) @ 25°C

70ns/150ns

Test Condition

480V, 50A, 2.7Ohm, 15V

Reverse Recovery Time (trr)

35ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

90A

Current - Collector Pulsed (Icm)

192A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 48A

Power - Max

325W

Switching Energy

2.9mJ (on), 1.4mJ (off)

Input Type

Standard

Gate Charge

145nC

Td (on/off) @ 25°C

70ns/140ns

Test Condition

400V, 48A, 10Ohm, 15V

Reverse Recovery Time (trr)

170ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD

IRGB4045DPBF

Infineon Technologies

Manufacturer

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Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

12A

Current - Collector Pulsed (Icm)

18A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 6A

Power - Max

77W

Switching Energy

56µJ (on), 122µJ (off)

Input Type

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Gate Charge

13nC

Td (on/off) @ 25°C

27ns/75ns

Test Condition

400V, 6A, 47Ohm, 15V

Reverse Recovery Time (trr)

74ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-220-3

Supplier Device Package

TO-220AB

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