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IKA10N65ET6XKSA1

IKA10N65ET6XKSA1

For Reference Only

Part Number IKA10N65ET6XKSA1
PNEDA Part # IKA10N65ET6XKSA1
Description IGBT 650V 10A TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,976
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 25 - May 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IKA10N65ET6XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIKA10N65ET6XKSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IKA10N65ET6XKSA1 Specifications

ManufacturerInfineon Technologies
Series*
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)-
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input Type-
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

80W

Switching Energy

140µJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

15ns/50ns

Test Condition

480V, 7A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

150°C (TJ)

Mounting Type

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TO-220-3

Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

27A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

3.15V @ 15V, 15A

Power - Max

138W

Switching Energy

530µJ

Input Type

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Gate Charge

80nC

Td (on/off) @ 25°C

13ns/209ns

Test Condition

400V, 15A, 23Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

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Supplier Device Package

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Microsemi

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

44A

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 8A

Power - Max

156W

Switching Energy

300µJ (on), 285µJ (off)

Input Type

Standard

Gate Charge

65nC

Td (on/off) @ 25°C

7ns/100ns

Test Condition

800V, 8A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

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Manufacturer

Infineon Technologies

Series

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IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

30A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

3.4V @ 15V, 15A

Power - Max

160W

Switching Energy

730µJ (on), 1.66mJ (off)

Input Type

Standard

Gate Charge

94nC

Td (on/off) @ 25°C

30ns/200ns

Test Condition

960V, 15A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AC

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Series

TrenchStop™

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

12A

Current - Collector Pulsed (Icm)

18A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 6A

Power - Max

100W

Switching Energy

110µJ (on), 220µJ (off)

Input Type

Standard

Gate Charge

48nC

Td (on/off) @ 25°C

12ns/127ns

Test Condition

400V, 6A, 23Ohm, 15V

Reverse Recovery Time (trr)

68ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

PG-TO252-3

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