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IKB03N120H2ATMA1

IKB03N120H2ATMA1

For Reference Only

Part Number IKB03N120H2ATMA1
PNEDA Part # IKB03N120H2ATMA1
Description IGBT 1200V 9.6A 62.5W TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,984
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IKB03N120H2ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIKB03N120H2ATMA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IKB03N120H2ATMA1 Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)9.6A
Current - Collector Pulsed (Icm)9.9A
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 3A
Power - Max62.5W
Switching Energy290µJ
Input TypeStandard
Gate Charge22nC
Td (on/off) @ 25°C9.2ns/281ns
Test Condition800V, 3A, 82Ohm, 15V
Reverse Recovery Time (trr)42ns
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackagePG-TO263-3-2

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Td (on/off) @ 25°C

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Test Condition

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Operating Temperature

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Current - Collector (Ic) (Max)

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Td (on/off) @ 25°C

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Test Condition

600V, 10A, 10Ohm, 15V

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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-40°C ~ 175°C (TJ)

Mounting Type

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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