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IKFW60N60EH3XKSA1

IKFW60N60EH3XKSA1

For Reference Only

Part Number IKFW60N60EH3XKSA1
PNEDA Part # IKFW60N60EH3XKSA1
Description INDUSTRY 14
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,866
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 6 - Jun 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IKFW60N60EH3XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIKFW60N60EH3XKSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IKFW60N60EH3XKSA1 Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)-
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input Type-
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 30A

Power - Max

250W

Switching Energy

540µJ (on), 800µJ (off)

Input Type

Standard

Gate Charge

80nC

Td (on/off) @ 25°C

19ns/125ns

Test Condition

400V, 30A, 5Ohm, 15V

Reverse Recovery Time (trr)

60ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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STMicroelectronics

Manufacturer

STMicroelectronics

Series

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IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

8A

Current - Collector Pulsed (Icm)

16A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 4A

Power - Max

68W

Switching Energy

40µJ (on), 136µJ (off)

Input Type

Standard

Gate Charge

15.2nC

Td (on/off) @ 25°C

12ns/86ns

Test Condition

400V, 4A, 47Ohm, 15V

Reverse Recovery Time (trr)

133ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

DPAK

IRGP4266PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

140A

Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 75A

Power - Max

450W

Switching Energy

3.2mJ (on), 1.7mJ (off)

Input Type

Standard

Gate Charge

210nC

Td (on/off) @ 25°C

80ns/200ns

Test Condition

400V, 75A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AC

IRG7CH75UED-R

Infineon Technologies

Manufacturer

Infineon Technologies

Series

*

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

-

Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

-

Power - Max

-

Switching Energy

-

Input Type

-

Gate Charge

-

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

-

Operating Temperature

-

Mounting Type

-

Package / Case

-

Supplier Device Package

-

HGTD3N60C3S9A

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

6A

Current - Collector Pulsed (Icm)

24A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 3A

Power - Max

33W

Switching Energy

85µJ (on), 245µJ (off)

Input Type

Standard

Gate Charge

10.8nC

Td (on/off) @ 25°C

-

Test Condition

480V, 3A, 82Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

TO-252AA

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