IKW30N65EL5XKSA1
For Reference Only
| Part Number | IKW30N65EL5XKSA1 |
| PNEDA Part # | IKW30N65EL5XKSA1 |
| Description | IGBT 650V 30A FAST DIODE TO247-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 14,400 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 24 - Jun 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IKW30N65EL5XKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IKW30N65EL5XKSA1 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IKW30N65EL5XKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | TrenchStop™ 5 |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 85A |
| Current - Collector Pulsed (Icm) | 120A |
| Vce(on) (Max) @ Vge, Ic | 1.35V @ 15V, 30A |
| Power - Max | 227W |
| Switching Energy | 470µJ (on), 1.35mJ (off) |
| Input Type | Standard |
| Gate Charge | 168nC |
| Td (on/off) @ 25°C | 33ns/308ns |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 100ns |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | PG-TO247-3 |
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Manufacturer IXYS Series GenX3™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 300V Current - Collector (Ic) (Max) 75A Current - Collector Pulsed (Icm) 420A Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 60A Power - Max 300W Switching Energy 150µJ (on), 300µJ (off) Input Type Standard Gate Charge 101nC Td (on/off) @ 25°C 23ns/108ns Test Condition 200V, 30A, 5Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247AD (IXGH) |
Manufacturer IXYS Series GenX3™ IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 75A Current - Collector Pulsed (Icm) 230A Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 32A Power - Max 300W Switching Energy - Input Type Standard Gate Charge 89nC Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Supplier Device Package TO-268 |
Manufacturer Infineon Technologies Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 60A Current - Collector Pulsed (Icm) 120A Vce(on) (Max) @ Vge, Ic 4V @ 15V, 60A Power - Max 300W Switching Energy 1.07mJ (on), 1.49mJ (off) Input Type Standard Gate Charge 169nC Td (on/off) @ 25°C - Test Condition 600V, 25A, 5Ohm, 15V Reverse Recovery Time (trr) 300ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247AD |
Manufacturer Microsemi Corporation Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 135A Current - Collector Pulsed (Icm) 150A Vce(on) (Max) @ Vge, Ic 3V @ 15V, 50A Power - Max 781W Switching Energy 3.6mJ (on), 2.64mJ (off) Input Type Standard Gate Charge 340nC Td (on/off) @ 25°C 25ns/260ns Test Condition 800V, 50A, 1Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-264-3, TO-264AA Supplier Device Package TO-264 [L] |
