IKW40N65ES5XKSA1
For Reference Only
| Part Number | IKW40N65ES5XKSA1 |
| PNEDA Part # | IKW40N65ES5XKSA1 |
| Description | IGBT TRENCH 650V 79A TO247-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 20,076 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 6 - May 11 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IKW40N65ES5XKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IKW40N65ES5XKSA1 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IKW40N65ES5XKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | TrenchStop™ |
| IGBT Type | Trench |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 79A |
| Current - Collector Pulsed (Icm) | 160A |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 40A |
| Power - Max | 230W |
| Switching Energy | 860µJ (on), 400µJ (off) |
| Input Type | Standard |
| Gate Charge | 95nC |
| Td (on/off) @ 25°C | 19ns/130ns |
| Test Condition | 400V, 40A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 73ns |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | PG-TO247-3 |
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Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 100A Current - Collector Pulsed (Icm) 200A Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 50A Power - Max 652W Switching Energy 3mJ (on), 1.9mJ (off) Input Type Standard Gate Charge 235nC Td (on/off) @ 25°C 34ns/297ns Test Condition 600V, 50A, 10Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package PG-TO247-3-46 |
Manufacturer Microsemi Corporation Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 75A Current - Collector Pulsed (Icm) 100A Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 25A Power - Max 521W Switching Energy 742µJ (on), 427µJ (off) Input Type Standard Gate Charge 203nC Td (on/off) @ 25°C 16ns/122ns Test Condition 600V, 25A, 4.3Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 |
