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IKW75N60TAFKSA1

IKW75N60TAFKSA1

For Reference Only

Part Number IKW75N60TAFKSA1
PNEDA Part # IKW75N60TAFKSA1
Description IGBT 600V 80A 428W TO247-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,156
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IKW75N60TAFKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIKW75N60TAFKSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IKW75N60TAFKSA1 Specifications

ManufacturerInfineon Technologies
SeriesTrenchStop®
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)80A
Current - Collector Pulsed (Icm)225A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 75A
Power - Max428W
Switching Energy4.5mJ
Input TypeStandard
Gate Charge470nC
Td (on/off) @ 25°C33ns/330ns
Test Condition400V, 75A, 5Ohm, 15V
Reverse Recovery Time (trr)121ns
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

250A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 30A

Power - Max

300W

Switching Energy

410µJ (on), 230µJ (off)

Input Type

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Gate Charge

77nC

Td (on/off) @ 25°C

19ns/60ns

Test Condition

400V, 30A, 3Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

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STMicroelectronics

Manufacturer

STMicroelectronics

Series

HB

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

80A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 20A

Power - Max

168W

Switching Energy

170µJ (off)

Input Type

Standard

Gate Charge

120nC

Td (on/off) @ 25°C

-/139ns

Test Condition

400V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

140ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

TO-3P

Manufacturer

IXYS

Series

GenX4™, XPT™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

120A

Current - Collector Pulsed (Icm)

240A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 40A

Power - Max

455W

Switching Energy

1.4mJ (on), 560µJ (off)

Input Type

Standard

Gate Charge

77nC

Td (on/off) @ 25°C

28ns/144ns

Test Condition

400V, 40A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 (IXXH)

IXGK60N60

IXYS

Manufacturer

IXYS

Series

-

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 60A

Power - Max

300W

Switching Energy

8mJ (off)

Input Type

Standard

Gate Charge

130nC

Td (on/off) @ 25°C

50ns/300ns

Test Condition

480V, 60A, 2.7Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264 (IXGK)

IRG4BC10SD

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

14A

Current - Collector Pulsed (Icm)

18A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 8A

Power - Max

38W

Switching Energy

310µJ (on), 3.28mJ (off)

Input Type

Standard

Gate Charge

15nC

Td (on/off) @ 25°C

76ns/815ns

Test Condition

480V, 8A, 100Ohm, 15V

Reverse Recovery Time (trr)

28ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

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