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IKZ75N65NH5XKSA1

IKZ75N65NH5XKSA1

For Reference Only

Part Number IKZ75N65NH5XKSA1
PNEDA Part # IKZ75N65NH5XKSA1
Description IGBT 650V 75A CO-PACK TO-247-4
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,064
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 21 - Jun 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IKZ75N65NH5XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIKZ75N65NH5XKSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IKZ75N65NH5XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesTrenchStop™ 5
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)90A
Current - Collector Pulsed (Icm)300A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 75A
Power - Max395W
Switching Energy880µJ (on), 520µJ (off)
Input TypeStandard
Gate Charge166nC
Td (on/off) @ 25°C52ns/412ns
Test Condition400V, 37.5A, 27Ohm, 15V
Reverse Recovery Time (trr)59ns
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-4
Supplier Device PackagePG-TO247-4

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 32A

Power - Max

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Switching Energy

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Input Type

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Gate Charge

110nC

Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

16A

Current - Collector Pulsed (Icm)

32A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 10A

Power - Max

44W

Switching Energy

156µJ (on), 165µJ (off)

Input Type

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Gate Charge

41nC

Td (on/off) @ 25°C

25ns/180ns

Test Condition

400V, 10A, 50Ohm, 15V

Reverse Recovery Time (trr)

79ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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STMicroelectronics

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

50A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 7A

Power - Max

70W

Switching Energy

95µJ (on), 115µJ (off)

Input Type

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Gate Charge

35nC

Td (on/off) @ 25°C

18.5ns/72ns

Test Condition

390V, 7A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

DPAK

Manufacturer

IXYS

Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

20A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 10A

Power - Max

85W

Switching Energy

1.1mJ (on), 1.1mJ (off)

Input Type

Standard

Gate Charge

27nC

Td (on/off) @ 25°C

-

Test Condition

600V, 10A, 100Ohm, 15V

Reverse Recovery Time (trr)

350ns

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

STGWA30N120KD

STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

100A

Vce(on) (Max) @ Vge, Ic

3.85V @ 15V, 20A

Power - Max

220W

Switching Energy

2.4mJ (on), 4.3mJ (off)

Input Type

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Gate Charge

105nC

Td (on/off) @ 25°C

36ns/251ns

Test Condition

960V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

84ns

Operating Temperature

-55°C ~ 125°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247

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