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IM818MCCXKMA1

IM818MCCXKMA1

For Reference Only

Part Number IM818MCCXKMA1
PNEDA Part # IM818MCCXKMA1
Description CIPOS MAXI
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,632
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IM818MCCXKMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIM818MCCXKMA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IM818MCCXKMA1 Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)-
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input TypeLogic
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting TypeThrough Hole
Package / Case36-DIP Module, 24 Leads
Supplier Device PackageDIP 36x23D

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

88W

Switching Energy

56µJ (on), 78.5µJ (off)

Input Type

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Td (on/off) @ 25°C

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Test Condition

400V, 5A, 47Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Series

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

260A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 40A

Power - Max

170W

Switching Energy

830µJ (on), 450µJ (off)

Input Type

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Gate Charge

115nC

Td (on/off) @ 25°C

24ns/70ns

Test Condition

480V, 40A, 3Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 16A

Power - Max

100W

Switching Energy

360µJ (on), 510µJ (off)

Input Type

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Gate Charge

67nC

Td (on/off) @ 25°C

26ns/130ns

Test Condition

480V, 16A, 23Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

8.5A

Current - Collector Pulsed (Icm)

34A

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 5A

Power - Max

38W

Switching Energy

140µJ (on), 120µJ (off)

Input Type

Standard

Gate Charge

15nC

Td (on/off) @ 25°C

40ns/87ns

Test Condition

480V, 5A, 100Ohm, 15V

Reverse Recovery Time (trr)

28ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

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ON Semiconductor

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

55µJ (on), 100µJ (off)

Input Type

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Gate Charge

23nC

Td (on/off) @ 25°C

6ns/40ns

Test Condition

390V, 12A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB

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