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IM818MCCXKMA1

IM818MCCXKMA1

For Reference Only

Part Number IM818MCCXKMA1
PNEDA Part # IM818MCCXKMA1
Description CIPOS MAXI
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,632
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IM818MCCXKMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIM818MCCXKMA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IM818MCCXKMA1 Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)-
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input TypeLogic
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting TypeThrough Hole
Package / Case36-DIP Module, 24 Leads
Supplier Device PackageDIP 36x23D

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

10A

Current - Collector Pulsed (Icm)

20A

Vce(on) (Max) @ Vge, Ic

1.95V @ 15V, 5A

Power - Max

88W

Switching Energy

56µJ (on), 78.5µJ (off)

Input Type

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Gate Charge

43nC

Td (on/off) @ 25°C

30ns/140ns

Test Condition

400V, 5A, 47Ohm, 15V

Reverse Recovery Time (trr)

134.5ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1700V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

3.3V @ 15V, 32A

Power - Max

350W

Switching Energy

15mJ (off)

Input Type

Standard

Gate Charge

155nC

Td (on/off) @ 25°C

45ns/270ns

Test Condition

1360V, 32A, 2.7Ohm, 15V

Reverse Recovery Time (trr)

150ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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Infineon Technologies

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Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

15A

Current - Collector Pulsed (Icm)

15A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 5A

Power - Max

89W

Switching Energy

300µJ (on), 300µJ (off)

Input Type

Standard

Gate Charge

45nC

Td (on/off) @ 25°C

20ns/160ns

Test Condition

600V, 5A, 47Ohm, 15V

Reverse Recovery Time (trr)

50ns

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AC

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

8.5A

Current - Collector Pulsed (Icm)

34A

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 5A

Power - Max

38W

Switching Energy

140µJ (on), 120µJ (off)

Input Type

Standard

Gate Charge

15nC

Td (on/off) @ 25°C

40ns/87ns

Test Condition

480V, 5A, 100Ohm, 15V

Reverse Recovery Time (trr)

28ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

STGW60H65DRF

STMicroelectronics

Manufacturer

STMicroelectronics

Series

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IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

120A

Current - Collector Pulsed (Icm)

240A

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 60A

Power - Max

420W

Switching Energy

940µJ (on), 1.06mJ (off)

Input Type

Standard

Gate Charge

217nC

Td (on/off) @ 25°C

85ns/178ns

Test Condition

400V, 60A, 10Ohm, 15V

Reverse Recovery Time (trr)

19ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247

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