IMW120R090M1HXKSA1
For Reference Only
| Part Number | IMW120R090M1HXKSA1 |
| PNEDA Part # | IMW120R090M1HXKSA1 |
| Description | COOLSIC MOSFETS 1200V |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 2,394 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 20 - Jun 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IMW120R090M1HXKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IMW120R090M1HXKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IMW120R090M1HXKSA1 Datasheet
- where to find IMW120R090M1HXKSA1
- Infineon Technologies
- Infineon Technologies IMW120R090M1HXKSA1
- IMW120R090M1HXKSA1 PDF Datasheet
- IMW120R090M1HXKSA1 Stock
- IMW120R090M1HXKSA1 Pinout
- Datasheet IMW120R090M1HXKSA1
- IMW120R090M1HXKSA1 Supplier
- Infineon Technologies Distributor
- IMW120R090M1HXKSA1 Price
- IMW120R090M1HXKSA1 Distributor
IMW120R090M1HXKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolSiC™ |
| FET Type | N-Channel |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 117mOhm @ 8.5A, 18V |
| Vgs(th) (Max) @ Id | 5.7V @ 3.7mA |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 18V |
| Vgs (Max) | +23V, -7V |
| Input Capacitance (Ciss) (Max) @ Vds | 707pF @ 800V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3-41 |
| Package / Case | TO-247-3 |
The Products You May Be Interested In
|
Manufacturer STMicroelectronics Series DeepGATE™, STripFET™ VI FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 160mOhm @ 5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 340pF @ 48V FET Feature - Power Dissipation (Max) 20W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |
Manufacturer Series NexFET™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 32.5mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id 1.15V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4.4nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 595pF @ 10V FET Feature - Power Dissipation (Max) 750mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-DSBGA Package / Case 6-UFBGA, DSBGA |
Manufacturer IXYS Series PolarHT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 140A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V, 15V Rds On (Max) @ Id, Vgs 11mOhm @ 70A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 155nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4700pF @ 25V FET Feature - Power Dissipation (Max) 600W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-268 Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 12A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 9mOhm @ 80A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V FET Feature - Power Dissipation (Max) 310W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 90A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.6mOhm @ 50A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 47.1nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2962pF @ 30V FET Feature - Power Dissipation (Max) 2.1W (Ta), 100W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
