IMW120R090M1HXKSA1
For Reference Only
| Part Number | IMW120R090M1HXKSA1 |
| PNEDA Part # | IMW120R090M1HXKSA1 |
| Description | COOLSIC MOSFETS 1200V |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 2,394 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 12 - May 17 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IMW120R090M1HXKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IMW120R090M1HXKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IMW120R090M1HXKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolSiC™ |
| FET Type | N-Channel |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 117mOhm @ 8.5A, 18V |
| Vgs(th) (Max) @ Id | 5.7V @ 3.7mA |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 18V |
| Vgs (Max) | +23V, -7V |
| Input Capacitance (Ciss) (Max) @ Vds | 707pF @ 800V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3-41 |
| Package / Case | TO-247-3 |
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