IPA030N10N3GXKSA1
For Reference Only
| Part Number | IPA030N10N3GXKSA1 |
| PNEDA Part # | IPA030N10N3GXKSA1 |
| Description | MOSFET N-CH 100V 79A TO220-FP |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 7,470 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 11 - May 16 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPA030N10N3GXKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPA030N10N3GXKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
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IPA030N10N3GXKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 79A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 79A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 270µA |
| Gate Charge (Qg) (Max) @ Vgs | 206nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 14800pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 41W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-FP |
| Package / Case | TO-220-3 Full Pack |
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Manufacturer Toshiba Semiconductor and Storage Series U-MOSVIII-H FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 100A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9000pF @ 40V FET Feature - Power Dissipation (Max) 255W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
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Manufacturer Infineon Technologies Series CoolMOS™ CFD7 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 280mOhm @ 3.6A, 10V Vgs(th) (Max) @ Id 4.5V @ 180µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 807pF @ 400V FET Feature - Power Dissipation (Max) 24W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220 Full Pack Package / Case TO-220-3 Full Pack |
