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IPA60R450E6XKSA1

IPA60R450E6XKSA1

For Reference Only

Part Number IPA60R450E6XKSA1
PNEDA Part # IPA60R450E6XKSA1
Description MOSFET N-CH 600V 9.2A TO220
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,898
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 19 - Jun 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPA60R450E6XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPA60R450E6XKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPA60R450E6XKSA1, IPA60R450E6XKSA1 Datasheet (Total Pages: 17, Size: 1,210.57 KB)
PDFIPA60R450E6XKSA1 Datasheet Cover
IPA60R450E6XKSA1 Datasheet Page 2 IPA60R450E6XKSA1 Datasheet Page 3 IPA60R450E6XKSA1 Datasheet Page 4 IPA60R450E6XKSA1 Datasheet Page 5 IPA60R450E6XKSA1 Datasheet Page 6 IPA60R450E6XKSA1 Datasheet Page 7 IPA60R450E6XKSA1 Datasheet Page 8 IPA60R450E6XKSA1 Datasheet Page 9 IPA60R450E6XKSA1 Datasheet Page 10 IPA60R450E6XKSA1 Datasheet Page 11

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IPA60R450E6XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs450mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id3.5V @ 280µA
Gate Charge (Qg) (Max) @ Vgs28nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds620pF @ 100V
FET Feature-
Power Dissipation (Max)30W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-FP
Package / CaseTO-220-3 Full Pack

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Current - Continuous Drain (Id) @ 25°C

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