IPAN80R360P7XKSA1
For Reference Only
| Part Number | IPAN80R360P7XKSA1 |
| PNEDA Part # | IPAN80R360P7XKSA1 |
| Description | MOSFET N-CHANNEL 800V 13A TO220 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 5,868 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 4 - May 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IPAN80R360P7XKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IPAN80R360P7XKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IPAN80R360P7XKSA1 Datasheet
- where to find IPAN80R360P7XKSA1
- Infineon Technologies
- Infineon Technologies IPAN80R360P7XKSA1
- IPAN80R360P7XKSA1 PDF Datasheet
- IPAN80R360P7XKSA1 Stock
- IPAN80R360P7XKSA1 Pinout
- Datasheet IPAN80R360P7XKSA1
- IPAN80R360P7XKSA1 Supplier
- Infineon Technologies Distributor
- IPAN80R360P7XKSA1 Price
- IPAN80R360P7XKSA1 Distributor
IPAN80R360P7XKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ P7 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 5.6A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 280µA |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 930pF @ 500V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220 Full Pack |
| Package / Case | TO-220-3 Full Pack |
The Products You May Be Interested In
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.4mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2040pF @ 15V FET Feature - Power Dissipation (Max) 5W (Ta), 34.7W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7.4mOhm @ 80A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4700pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO262-3-1 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer Vishay Siliconix Series LITTLE FOOT® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 58mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 480pF @ 10V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 2.3W (Ta), 10.4W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® ChipFet Dual Package / Case PowerPAK® ChipFET™ Dual |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.7mOhm @ 80A, 10V Vgs(th) (Max) @ Id 2.2V @ 40µA Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 5680pF @ 25V FET Feature - Power Dissipation (Max) 79W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO262-3 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer Series NexFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 274A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.7mOhm @ 100A, 10V Vgs(th) (Max) @ Id 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 153nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 11400pF @ 20V FET Feature - Power Dissipation (Max) 250W (Ta) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DDPAK/TO-263-3 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
