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IPAW60R180P7SXKSA1

IPAW60R180P7SXKSA1

For Reference Only

Part Number IPAW60R180P7SXKSA1
PNEDA Part # IPAW60R180P7SXKSA1
Description MOSFET N-CHANNEL 650V 18A TO220
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 19,692
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 10 - May 15 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPAW60R180P7SXKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPAW60R180P7SXKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPAW60R180P7SXKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ P7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs180mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1081pF @ 400V
FET Feature-
Power Dissipation (Max)26W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220 Full Pack
Package / CaseTO-220-3 Full Pack

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