Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPB023N04NGATMA1

IPB023N04NGATMA1

For Reference Only

Part Number IPB023N04NGATMA1
PNEDA Part # IPB023N04NGATMA1
Description MOSFET N-CH 40V 90A TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,798
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB023N04NGATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB023N04NGATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPB023N04NGATMA1 Datasheet
  • where to find IPB023N04NGATMA1
  • Infineon Technologies

  • Infineon Technologies IPB023N04NGATMA1
  • IPB023N04NGATMA1 PDF Datasheet
  • IPB023N04NGATMA1 Stock

  • IPB023N04NGATMA1 Pinout
  • Datasheet IPB023N04NGATMA1
  • IPB023N04NGATMA1 Supplier

  • Infineon Technologies Distributor
  • IPB023N04NGATMA1 Price
  • IPB023N04NGATMA1 Distributor

IPB023N04NGATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.3mOhm @ 90A, 10V
Vgs(th) (Max) @ Id4V @ 95µA
Gate Charge (Qg) (Max) @ Vgs120nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10000pF @ 20V
FET Feature-
Power Dissipation (Max)167W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

SI5486DU-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

15mOhm @ 7.7A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

54nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

2100pF @ 10V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 31W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PowerPak® ChipFet (3x1.9)

Package / Case

8-PowerVDFN

APT40M75JN

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS IV®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

400V

Current - Continuous Drain (Id) @ 25°C

56A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

75mOhm @ 28A, 10V

Vgs(th) (Max) @ Id

4V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

370nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

6800pF @ 25V

FET Feature

-

Power Dissipation (Max)

520W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

ISOTOP®

Package / Case

SOT-227-4, miniBLOC

NTD78N03

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

11.4A (Ta), 78A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6mOhm @ 78A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2250pF @ 12V

FET Feature

-

Power Dissipation (Max)

1.4W (Ta), 64W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRF3707S

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

62A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

12.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1990pF @ 15V

FET Feature

-

Power Dissipation (Max)

87W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

NTGS3136PT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

33mOhm @ 5.1A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1901pF @ 10V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6

Recently Sold

SI2347DS-T1-GE3

SI2347DS-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 5A SOT-23

MAX9100EUK+T

MAX9100EUK+T

Maxim Integrated

IC COMPARATOR R-R SOT23-5

1N4148WT

1N4148WT

ON Semiconductor

DIODE GEN PURP 75V 200MA SOD523F

XA7Z020-1CLG484Q

XA7Z020-1CLG484Q

Xilinx

IC SOC CORTEX-A9 667MHZ 484BGA

FGH40N60SMD

FGH40N60SMD

ON Semiconductor

IGBT 600V 80A 349W TO-247-3

SMF6.0A

SMF6.0A

Littelfuse

TVS DIODE 6V 10.3V SOD123F

IRLML9301TRPBF

IRLML9301TRPBF

Infineon Technologies

MOSFET P-CH 30V 3.6A SOT-23-3

FOD4108V

FOD4108V

ON Semiconductor

OPTOISOLATOR 5KV TRIAC 6DIP

ADG1334BRSZ

ADG1334BRSZ

Analog Devices

IC SWITCH QUAD SPDT 20SSOP

LTC3418EUHF#PBF

LTC3418EUHF#PBF

Linear Technology/Analog Devices

IC REG BUCK ADJUSTABLE 8A 38QFN

B350B-13-F

B350B-13-F

Diodes Incorporated

DIODE SCHOTTKY 50V 3A SMB

2773021447

2773021447

Fair-Rite Products

FERRITE BEAD 2SMD 1LN