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IPB032N10N5ATMA1

IPB032N10N5ATMA1

For Reference Only

Part Number IPB032N10N5ATMA1
PNEDA Part # IPB032N10N5ATMA1
Description MOSFET N-CH 100V 166A TO263-7
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,454
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB032N10N5ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB032N10N5ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPB032N10N5ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C166A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs3.2mOhm @ 83A, 10V
Vgs(th) (Max) @ Id3.8V @ 125µA
Gate Charge (Qg) (Max) @ Vgs95nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6970pF @ 50V
FET Feature-
Power Dissipation (Max)187W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-7
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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