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IPB075N04LGATMA1

IPB075N04LGATMA1

For Reference Only

Part Number IPB075N04LGATMA1
PNEDA Part # IPB075N04LGATMA1
Description MOSFET N-CH 40V 50A TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,348
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB075N04LGATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB075N04LGATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPB075N04LGATMA1, IPB075N04LGATMA1 Datasheet (Total Pages: 9, Size: 445.62 KB)
PDFIPB075N04LGATMA1 Datasheet Cover
IPB075N04LGATMA1 Datasheet Page 2 IPB075N04LGATMA1 Datasheet Page 3 IPB075N04LGATMA1 Datasheet Page 4 IPB075N04LGATMA1 Datasheet Page 5 IPB075N04LGATMA1 Datasheet Page 6 IPB075N04LGATMA1 Datasheet Page 7 IPB075N04LGATMA1 Datasheet Page 8 IPB075N04LGATMA1 Datasheet Page 9

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IPB075N04LGATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2800pF @ 25V
FET Feature-
Power Dissipation (Max)56W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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