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IPB080N06N G

IPB080N06N G

For Reference Only

Part Number IPB080N06N G
PNEDA Part # IPB080N06N-G
Description MOSFET N-CH 60V 80A TO-263
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,560
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB080N06N G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB080N06N G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPB080N06N G, IPB080N06N G Datasheet (Total Pages: 10, Size: 739.32 KB)
PDFIPP080N06N G Datasheet Cover
IPP080N06N G Datasheet Page 2 IPP080N06N G Datasheet Page 3 IPP080N06N G Datasheet Page 4 IPP080N06N G Datasheet Page 5 IPP080N06N G Datasheet Page 6 IPP080N06N G Datasheet Page 7 IPP080N06N G Datasheet Page 8 IPP080N06N G Datasheet Page 9 IPP080N06N G Datasheet Page 10

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IPB080N06N G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs93nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3500pF @ 30V
FET Feature-
Power Dissipation (Max)214W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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