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IPB100N06S3-04

IPB100N06S3-04

For Reference Only

Part Number IPB100N06S3-04
PNEDA Part # IPB100N06S3-04
Description MOSFET N-CH 55V 100A TO-263
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,388
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 19 - Jun 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB100N06S3-04 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB100N06S3-04
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPB100N06S3-04, IPB100N06S3-04 Datasheet (Total Pages: 9, Size: 197.28 KB)
PDFIPB100N06S3-04 Datasheet Cover
IPB100N06S3-04 Datasheet Page 2 IPB100N06S3-04 Datasheet Page 3 IPB100N06S3-04 Datasheet Page 4 IPB100N06S3-04 Datasheet Page 5 IPB100N06S3-04 Datasheet Page 6 IPB100N06S3-04 Datasheet Page 7 IPB100N06S3-04 Datasheet Page 8 IPB100N06S3-04 Datasheet Page 9

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IPB100N06S3-04 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.1mOhm @ 80A, 10V
Vgs(th) (Max) @ Id4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs314nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds14230pF @ 25V
FET Feature-
Power Dissipation (Max)214W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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