Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPB100N12S305ATMA1

IPB100N12S305ATMA1

For Reference Only

Part Number IPB100N12S305ATMA1
PNEDA Part # IPB100N12S305ATMA1
Description MOSFET N-CH 120V 100A TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,262
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 12 - Jul 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB100N12S305ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB100N12S305ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPB100N12S305ATMA1 Datasheet
  • where to find IPB100N12S305ATMA1
  • Infineon Technologies

  • Infineon Technologies IPB100N12S305ATMA1
  • IPB100N12S305ATMA1 PDF Datasheet
  • IPB100N12S305ATMA1 Stock

  • IPB100N12S305ATMA1 Pinout
  • Datasheet IPB100N12S305ATMA1
  • IPB100N12S305ATMA1 Supplier

  • Infineon Technologies Distributor
  • IPB100N12S305ATMA1 Price
  • IPB100N12S305ATMA1 Distributor

IPB100N12S305ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)120V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs185nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds11570pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3
Package / CaseTO-263-4, D²Pak (3 Leads + Tab), TO-263AA

The Products You May Be Interested In

IRFPG50

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

6.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2Ohm @ 3.6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

190nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2800pF @ 25V

FET Feature

-

Power Dissipation (Max)

190W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

SSM3K2615R,LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

π-MOSV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

3.3V, 10V

Rds On (Max) @ Id, Vgs

300mOhm @ 1A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

150pF @ 10V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23F

Package / Case

SOT-23-3 Flat Leads

TPC6110(TE85L,F,M)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVI

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

56mOhm @ 2.2A, 10V

Vgs(th) (Max) @ Id

2V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

510pF @ 10V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

VS-6 (2.9x2.8)

Package / Case

SOT-23-6 Thin, TSOT-23-6

IRFZ24NLPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

70mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

370pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 45W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

ZXM64N02XTA

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

5.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.7V, 4.5V

Rds On (Max) @ Id, Vgs

40mOhm @ 3.8A, 4.5V

Vgs(th) (Max) @ Id

700mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

1100pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-MSOP

Package / Case

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Recently Sold

PBSS4250X,115

PBSS4250X,115

Nexperia

TRANS NPN 50V 2A SOT89

MCP73862T-I/SL

MCP73862T-I/SL

Microchip Technology

IC LI-ION CTRLR 8.2/8.4V 16SOIC

REF196GSZ

REF196GSZ

Analog Devices

IC VREF SERIES 3.3V 8SOIC

ULN2003ADR2G

ULN2003ADR2G

ON Semiconductor

IC PWR RELAY 7NPN 1:1 16SO

S6010RTP

S6010RTP

Littelfuse

SCR SENS 600V 10A TO220

PA0277NL

PA0277NL

Pulse Electronics Power

FIXED IND 700NH 10.7A 95 MOHM

HCPL-7710-000E

HCPL-7710-000E

Broadcom

OPTOISO 3.75KV PUSH PULL 8DIP

NC7WZ132K8X

NC7WZ132K8X

ON Semiconductor

IC GATE NAND SCHMITT 2CH US8

RCLAMP0502N.TCT

RCLAMP0502N.TCT

Semtech

TVS DIODE 6.5V 30V SLP1210N6

LTC1326IS8-2.5#PBF

LTC1326IS8-2.5#PBF

Linear Technology/Analog Devices

IC PREC TRPL SUPPLY MONITR 8SOIC

3314J-1-103E

3314J-1-103E

Bourns

TRIMMER 10K OHM 0.25W J LEAD TOP

AT28C16-15TC

AT28C16-15TC

Microchip Technology

IC EEPROM 16K PARALLEL 28TSOP