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IPB100N12S305ATMA1

IPB100N12S305ATMA1

For Reference Only

Part Number IPB100N12S305ATMA1
PNEDA Part # IPB100N12S305ATMA1
Description MOSFET N-CH 120V 100A TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,262
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB100N12S305ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB100N12S305ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPB100N12S305ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)120V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs185nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds11570pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3
Package / CaseTO-263-4, D²Pak (3 Leads + Tab), TO-263AA

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