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IPB110P06LMATMA1

IPB110P06LMATMA1

For Reference Only

Part Number IPB110P06LMATMA1
PNEDA Part # IPB110P06LMATMA1
Description MOSFET P-CH 60V TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,662
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 18 - Jun 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB110P06LMATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB110P06LMATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPB110P06LMATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs11mOhm @ 100A, 10V
Vgs(th) (Max) @ Id2V @ 5.55mA
Gate Charge (Qg) (Max) @ Vgs281nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8500pF @ 30V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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