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IPB13N03LB G

IPB13N03LB G

For Reference Only

Part Number IPB13N03LB G
PNEDA Part # IPB13N03LB-G
Description MOSFET N-CH 30V 30A TO-263
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,606
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 12 - Jul 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB13N03LB G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB13N03LB G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPB13N03LB G, IPB13N03LB G Datasheet (Total Pages: 9, Size: 279.53 KB)
PDFIPB13N03LB G Datasheet Cover
IPB13N03LB G Datasheet Page 2 IPB13N03LB G Datasheet Page 3 IPB13N03LB G Datasheet Page 4 IPB13N03LB G Datasheet Page 5 IPB13N03LB G Datasheet Page 6 IPB13N03LB G Datasheet Page 7 IPB13N03LB G Datasheet Page 8 IPB13N03LB G Datasheet Page 9

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IPB13N03LB G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs12.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1355pF @ 15V
FET Feature-
Power Dissipation (Max)52W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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