IPB180P04P4L02ATMA1
For Reference Only
| Part Number | IPB180P04P4L02ATMA1 |
| PNEDA Part # | IPB180P04P4L02ATMA1 |
| Description | MOSFET P-CH 40V 180A TO263-7 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 53,640 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jul 25 - Jul 30 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPB180P04P4L02ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPB180P04P4L02ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPB180P04P4L02ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 410µA |
| Gate Charge (Qg) (Max) @ Vgs | 286nC @ 10V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 18700pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7-3 |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 24A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 2.9mOhm @ 100A, 10V Vgs(th) (Max) @ Id 2.8V @ 75µA Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 30V FET Feature - Power Dissipation (Max) 3W (Ta), 136W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO262-3 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9.5mOhm @ 16A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3200pF @ 38V FET Feature - Power Dissipation (Max) 5.2W (Ta), 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 10-PolarPAK® (L) Package / Case 10-PolarPAK® (L) |
