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IPB25N06S3L-22

IPB25N06S3L-22

For Reference Only

Part Number IPB25N06S3L-22
PNEDA Part # IPB25N06S3L-22
Description MOSFET N-CH 55V 25A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,670
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 15 - May 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB25N06S3L-22 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB25N06S3L-22
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPB25N06S3L-22, IPB25N06S3L-22 Datasheet (Total Pages: 9, Size: 186.25 KB)
PDFIPP25N06S3L-22 Datasheet Cover
IPP25N06S3L-22 Datasheet Page 2 IPP25N06S3L-22 Datasheet Page 3 IPP25N06S3L-22 Datasheet Page 4 IPP25N06S3L-22 Datasheet Page 5 IPP25N06S3L-22 Datasheet Page 6 IPP25N06S3L-22 Datasheet Page 7 IPP25N06S3L-22 Datasheet Page 8 IPP25N06S3L-22 Datasheet Page 9

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IPB25N06S3L-22 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs21.3mOhm @ 17A, 10V
Vgs(th) (Max) @ Id2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs47nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds2260pF @ 25V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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