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IPB35N10S3L26ATMA1

IPB35N10S3L26ATMA1

For Reference Only

Part Number IPB35N10S3L26ATMA1
PNEDA Part # IPB35N10S3L26ATMA1
Description MOSFET N-CH TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,014
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB35N10S3L26ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB35N10S3L26ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPB35N10S3L26ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesAutomotive, AEC-Q101, OptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs26.3mOhm @ 35A, 10V
Vgs(th) (Max) @ Id2.4V @ 39µA
Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2700pF @ 25V
FET Feature-
Power Dissipation (Max)71W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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