IPB60R230P6ATMA1
For Reference Only
| Part Number | IPB60R230P6ATMA1 |
| PNEDA Part # | IPB60R230P6ATMA1 |
| Description | MOSFET N-CH 600V 16.8A 3TO263 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 5,400 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 30 - May 5 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPB60R230P6ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPB60R230P6ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPB60R230P6ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ P6 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 16.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 6.4A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 530µA |
| Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 126W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Manufacturer Vishay Siliconix Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.2Ohm @ 1.9A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.7nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 200pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta), 25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 48A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 100mOhm @ 24A, 10V Vgs(th) (Max) @ Id 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8400pF @ 25V FET Feature - Power Dissipation (Max) 500W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-264AA (IXFK) Package / Case TO-264-3, TO-264AA |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 34mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 500Ohm @ 16mA, 10V Vgs(th) (Max) @ Id 4.1V @ 8µA Gate Charge (Qg) (Max) @ Vgs 0.15nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 6pF @ 25V FET Feature - Power Dissipation (Max) 1.39W (Ta) Operating Temperature -50°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3 |
