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IPB65R045C7ATMA2

IPB65R045C7ATMA2

For Reference Only

Part Number IPB65R045C7ATMA2
PNEDA Part # IPB65R045C7ATMA2
Description MOSFET N-CH 650V 46A TO-263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,982
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 18 - Jun 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB65R045C7ATMA2 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB65R045C7ATMA2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPB65R045C7ATMA2 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ C7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C46A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs45mOhm @ 24.9A, 10V
Vgs(th) (Max) @ Id4V @ 1.25mA
Gate Charge (Qg) (Max) @ Vgs93nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4340pF @ 400V
FET Feature-
Power Dissipation (Max)227W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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