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IPB65R190C6ATMA1

IPB65R190C6ATMA1

For Reference Only

Part Number IPB65R190C6ATMA1
PNEDA Part # IPB65R190C6ATMA1
Description MOSFET N-CH 650V 20.2A TO263
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,268
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB65R190C6ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB65R190C6ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPB65R190C6ATMA1, IPB65R190C6ATMA1 Datasheet (Total Pages: 19, Size: 2,212 KB)
PDFIPB65R190C6ATMA1 Datasheet Cover
IPB65R190C6ATMA1 Datasheet Page 2 IPB65R190C6ATMA1 Datasheet Page 3 IPB65R190C6ATMA1 Datasheet Page 4 IPB65R190C6ATMA1 Datasheet Page 5 IPB65R190C6ATMA1 Datasheet Page 6 IPB65R190C6ATMA1 Datasheet Page 7 IPB65R190C6ATMA1 Datasheet Page 8 IPB65R190C6ATMA1 Datasheet Page 9 IPB65R190C6ATMA1 Datasheet Page 10 IPB65R190C6ATMA1 Datasheet Page 11

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IPB65R190C6ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id3.5V @ 730µA
Gate Charge (Qg) (Max) @ Vgs73nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1620pF @ 100V
FET Feature-
Power Dissipation (Max)151W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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