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IPB70N10S312ATMA1

IPB70N10S312ATMA1

For Reference Only

Part Number IPB70N10S312ATMA1
PNEDA Part # IPB70N10S312ATMA1
Description MOSFET N-CH 100V 70A TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 13,572
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB70N10S312ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB70N10S312ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPB70N10S312ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11.3mOhm @ 70A, 10V
Vgs(th) (Max) @ Id4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs66nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4355pF @ 25V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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