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IPB79CN10N G

IPB79CN10N G

For Reference Only

Part Number IPB79CN10N G
PNEDA Part # IPB79CN10N-G
Description MOSFET N-CH 100V 13A TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,722
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB79CN10N G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB79CN10N G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPB79CN10N G, IPB79CN10N G Datasheet (Total Pages: 13, Size: 621.19 KB)
PDFIPU78CN10N G Datasheet Cover
IPU78CN10N G Datasheet Page 2 IPU78CN10N G Datasheet Page 3 IPU78CN10N G Datasheet Page 4 IPU78CN10N G Datasheet Page 5 IPU78CN10N G Datasheet Page 6 IPU78CN10N G Datasheet Page 7 IPU78CN10N G Datasheet Page 8 IPU78CN10N G Datasheet Page 9 IPU78CN10N G Datasheet Page 10 IPU78CN10N G Datasheet Page 11

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IPB79CN10N G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs79mOhm @ 13A, 10V
Vgs(th) (Max) @ Id4V @ 12µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds716pF @ 50V
FET Feature-
Power Dissipation (Max)31W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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