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IPB80N04S3H4ATMA1

IPB80N04S3H4ATMA1

For Reference Only

Part Number IPB80N04S3H4ATMA1
PNEDA Part # IPB80N04S3H4ATMA1
Description MOSFET N-CH 40V 80A TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,874
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 21 - Jul 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB80N04S3H4ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB80N04S3H4ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPB80N04S3H4ATMA1, IPB80N04S3H4ATMA1 Datasheet (Total Pages: 9, Size: 169.24 KB)
PDFIPP80N04S3H4AKSA1 Datasheet Cover
IPP80N04S3H4AKSA1 Datasheet Page 2 IPP80N04S3H4AKSA1 Datasheet Page 3 IPP80N04S3H4AKSA1 Datasheet Page 4 IPP80N04S3H4AKSA1 Datasheet Page 5 IPP80N04S3H4AKSA1 Datasheet Page 6 IPP80N04S3H4AKSA1 Datasheet Page 7 IPP80N04S3H4AKSA1 Datasheet Page 8 IPP80N04S3H4AKSA1 Datasheet Page 9

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IPB80N04S3H4ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id4V @ 65µA
Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3900pF @ 25V
FET Feature-
Power Dissipation (Max)115W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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