IPC100N04S5L1R9ATMA1
For Reference Only
| Part Number | IPC100N04S5L1R9ATMA1 |
| PNEDA Part # | IPC100N04S5L1R9ATMA1 |
| Description | MOSFET N-CH 40V 100A 8TDSON |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 6,624 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 18 - May 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPC100N04S5L1R9ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPC100N04S5L1R9ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IPC100N04S5L1R9ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs | 81nC @ 10V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 4310pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TDSON-8-34 |
| Package / Case | 8-PowerTDFN |
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 28A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 110µA Gate Charge (Qg) (Max) @ Vgs 64nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8290pF @ 15V FET Feature - Power Dissipation (Max) 2.8W (Ta), 104W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TDSON-8-1 Package / Case 8-PowerTDFN |
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 160mOhm @ 1.4A, 10V Vgs(th) (Max) @ Id 2V @ 3.7µA Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 94pF @ 15V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |
