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IPC218N06N3X1SA2

IPC218N06N3X1SA2

For Reference Only

Part Number IPC218N06N3X1SA2
PNEDA Part # IPC218N06N3X1SA2
Description MOSFET N-CH 60V 3A SAWN ON FOIL
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,298
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPC218N06N3X1SA2 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPC218N06N3X1SA2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPC218N06N3X1SA2 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C3A (Tj)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id4V @ 196µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackageSawn on foil
Package / CaseDie

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