IPC302N20N3X1SA1
For Reference Only
| Part Number | IPC302N20N3X1SA1 |
| PNEDA Part # | IPC302N20N3X1SA1 |
| Description | MOSFET N-CH 200V 1A SAWN ON FOIL |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 4,068 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 11 - May 16 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPC302N20N3X1SA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPC302N20N3X1SA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
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IPC302N20N3X1SA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 260µA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | Sawn on foil |
| Package / Case | Die |
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