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IPD03N03LA G

IPD03N03LA G

For Reference Only

Part Number IPD03N03LA G
PNEDA Part # IPD03N03LA-G
Description MOSFET N-CH 25V 90A TO-252
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,400
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD03N03LA G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD03N03LA G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPD03N03LA G, IPD03N03LA G Datasheet (Total Pages: 10, Size: 402.38 KB)
PDFIPS03N03LA G Datasheet Cover
IPS03N03LA G Datasheet Page 2 IPS03N03LA G Datasheet Page 3 IPS03N03LA G Datasheet Page 4 IPS03N03LA G Datasheet Page 5 IPS03N03LA G Datasheet Page 6 IPS03N03LA G Datasheet Page 7 IPS03N03LA G Datasheet Page 8 IPS03N03LA G Datasheet Page 9 IPS03N03LA G Datasheet Page 10

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IPD03N03LA G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.2mOhm @ 60A, 10V
Vgs(th) (Max) @ Id2V @ 70µA
Gate Charge (Qg) (Max) @ Vgs41nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5200pF @ 15V
FET Feature-
Power Dissipation (Max)115W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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