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IPD042P03L3GATMA1

IPD042P03L3GATMA1

For Reference Only

Part Number IPD042P03L3GATMA1
PNEDA Part # IPD042P03L3GATMA1
Description MOSFET P-CH 30V 70A TO252-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,958
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD042P03L3GATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD042P03L3GATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPD042P03L3GATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.2mOhm @ 70A, 10V
Vgs(th) (Max) @ Id2V @ 270µA
Gate Charge (Qg) (Max) @ Vgs175nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds12400pF @ 15V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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