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IPD04N03LB G

IPD04N03LB G

For Reference Only

Part Number IPD04N03LB G
PNEDA Part # IPD04N03LB-G
Description MOSFET N-CH 30V 50A TO-252
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,140
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD04N03LB G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD04N03LB G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPD04N03LB G, IPD04N03LB G Datasheet (Total Pages: 12, Size: 521.29 KB)
PDFIPU04N03LB G Datasheet Cover
IPU04N03LB G Datasheet Page 2 IPU04N03LB G Datasheet Page 3 IPU04N03LB G Datasheet Page 4 IPU04N03LB G Datasheet Page 5 IPU04N03LB G Datasheet Page 6 IPU04N03LB G Datasheet Page 7 IPU04N03LB G Datasheet Page 8 IPU04N03LB G Datasheet Page 9 IPU04N03LB G Datasheet Page 10 IPU04N03LB G Datasheet Page 11

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IPD04N03LB G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 70µA
Gate Charge (Qg) (Max) @ Vgs40nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5200pF @ 15V
FET Feature-
Power Dissipation (Max)115W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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